430-2202/04 – Power Switching Devices (VSP)

Gurantor departmentDepartment of Applied ElectronicsCredits3
Subject guarantorIng. Tomáš Pavelek, Ph.D.Subject version guarantorIng. Tomáš Pavelek, Ph.D.
Study levelundergraduate or graduateRequirementCompulsory
Year2Semesterwinter
Study languageEnglish
Year of introduction2019/2020Year of cancellation2021/2022
Intended for the facultiesFEIIntended for study typesBachelor
Instruction secured by
LoginNameTuitorTeacher giving lectures
KOU0090 Ing. Daniel Kouřil, Ph.D.
MRO061 Ing. Tomáš Mrověc, Ph.D.
PAV15 Ing. Tomáš Pavelek, Ph.D.
Extent of instruction for forms of study
Form of studyWay of compl.Extent
Full-time Credit and Examination 1+1

Subject aims expressed by acquired skills and competences

The main goal of the subject is to obtain theoretical knowledge from power semiconductor devices areas and practical experiences with dimensioning and applications. Obtained knowledge employ to practical use for the design of various electronics equipments, as switching sources, various type regulators and power semiconductor converters. Learned information creates the knowledge base of bachelor, especially if his topic is aimed in area of power electronics systems application .

Teaching methods

Lectures
Tutorials
Experimental work in labs

Summary

Subject deals with characteristics components that are used at power semiconductor converters, not only at dissimilarity from typical low power components but so application of modern power switch off components that are bipolar and unipolar transistor, IGBT and thyristor GTO, MCT and IGCT.

Compulsory literature:

Rashid, M. H.: Power Electronics Handbook. Prentice-Hall International, Inc. ISBN 978-0-12-382036-5, 2011.

Recommended literature:

Heumann, K.: Basic Principles of Power Electronics. Springer-Verlag Berlin Heidelberg New York, ISBN 3642826768, 2012.

Way of continuous check of knowledge in the course of semester

Verification of study: Control tests T1, T2. Conditions for credit: Attendance on laboratory education (100%). Report submission from laboratory exercises. Attendance on control tests. Acquisition of 25 points (minimum). Point rating of exercises: maximum 40 points, test T1 - max. 10 points,test T2 - max. 10 points, laboratory reports = max. 20 points.

E-learning

Other requirements

There are no additional requirements for student.

Prerequisities

Subject has no prerequisities.

Co-requisities

Subject has no co-requisities.

Subject syllabus:

Lectures: Power semiconductor diode, static and dynamic characteristics, catalog parameters. Special type of power diodes, mode of load, separation of losses and application rules. Thyristor, static and dynamic characteristics, catalog parameters. Special type power thyristors, thyristors GATT, GTO, their features and application. Diac, triac, satic characteristics and application. Bipolar power transistor, static characteristics at switch on and switch off state. Bipolar power transistor at switching mode, behavior of transistor at transitionally state by switch on and switch off, power losses. Darlington´s connection, parallel-connected power transistor, example and application. Unipolar power transistor, static characteristics at switch on and switch off state. Unipolar power transistor at switching mode, operational area, power losses. Catalog parameters and separation of IGBT´s, characteristics and behaviour of IGBT at switch on and switch off state. IGBT at switching mode, curves switch on and switch off, power losses determination, permissible operational area. MCT, static and dynamic characteristics, power losses and permissible operational area. IGCT, static and dynamic characteristics, power losses and permissible operational area. Style and casing of power semiconductor devices, available power range and electro-temperature parameters. Laboratories: Calculations of diode losses from catalog information, relation to prerequisite refrigeration. Control test TEST 1 - Basic characteristics and parameters of diodes and thyristors. Laboratory exercises Nr.1 - Diode and thyristor power losses. Laboratory exercises Nr.2 - Static characteristics of power bipolar transistor. Laboratory exercises Nr.3 - Static characteristics of power unipolar transistor. Laboratory exercises Nr.4 - IGBT characteristics, measurement. Laboratory exercises Nr.5 - Driver for power transistors. Control test TEST 2 - Basic characteristics and parameters of unipolar transistors and IGBT´s.

Conditions for subject completion

Full-time form (validity from: 2019/2020 Winter semester, validity until: 2021/2022 Summer semester)
Task nameType of taskMax. number of points
(act. for subtasks)
Min. number of pointsMax. počet pokusů
Credit and Examination Credit and Examination 100 (100) 51
        Credit Credit 40 (40) 25
                Test č. 1 Written test 10  5
                Test č. 2 Written test 10  5
                Protokoly z laboratorních cvičení Laboratory work 20  10
        Examination Examination 60 (60) 20 3
                Písemná část Written examination 40  15
                Ústní část Oral examination 20  5
Mandatory attendence participation: Obligatory participation in laboratory exercises. Obligatory finishing of 2 tests in regular term.

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Conditions for subject completion and attendance at the exercises within ISP:

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Occurrence in study plans

Academic yearProgrammeBranch/spec.Spec.ZaměřeníFormStudy language Tut. centreYearWSType of duty
2021/2022 (B0714A060013) Applied Electronics P English Ostrava 2 Compulsory study plan
2020/2021 (B0714A060013) Applied Electronics P English Ostrava 2 Compulsory study plan
2019/2020 (B0714A060013) Applied Electronics P English Ostrava 2 Compulsory study plan

Occurrence in special blocks

Block nameAcademic yearForm of studyStudy language YearWSType of blockBlock owner

Assessment of instruction

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