430-2202/05 – Power Switching Devices (VSP)
Gurantor department | Department of Applied Electronics | Credits | 3 |
Subject guarantor | Ing. Tomáš Pavelek, Ph.D. | Subject version guarantor | Ing. Tomáš Pavelek, Ph.D. |
Study level | undergraduate or graduate | Requirement | Compulsory |
Year | 2 | Semester | winter |
| | Study language | Czech |
Year of introduction | 2022/2023 | Year of cancellation | |
Intended for the faculties | FEI | Intended for study types | Bachelor |
Subject aims expressed by acquired skills and competences
The main goal of the subject is to obtain theoretical knowledge from power semiconductor devices areas and practical experiences with dimensioning and applications. Obtained knowledge employ to practical use for the design of various electronics equipments, as switching sources, various type regulators and power semiconductor converters. Learned information creates the knowledge base of bachelor, especially if his topic is aimed in area of power electronics systems application .
Teaching methods
Lectures
Tutorials
Experimental work in labs
Summary
Subject deals with characteristics components that are used at power semiconductor converters, not only at dissimilarity from typical low power components but so application of modern power switch off components that are bipolar and unipolar transistor, IGBT and thyristor GTO, MCT and IGCT.
Compulsory literature:
Recommended literature:
Heumann, K.: Basic Principles of Power Electronics. Springer-Verlag Berlin Heidelberg New York, ISBN 3642826768, 2012.
Additional study materials
Way of continuous check of knowledge in the course of semester
Verification of study:
Control tests T1, T2.
Conditions for credit:
Attendance on laboratory education (100%).
Report submission from laboratory exercises.
Attendance on control tests.
Acquisition of 25 points (minimum).
Point rating of exercises:
maximum 40 points, test T1 - max. 10 points,test T2 - max. 10 points, laboratory reports = max. 20 points.
E-learning
Study supports are available in the LMS to students of the course.
Other requirements
There are no additional requirements for student.
Prerequisities
Subject has no prerequisities.
Co-requisities
Subject has no co-requisities.
Subject syllabus:
Lectures:
Power semiconductor diode, static and dynamic characteristics, catalog parameters. Special type of power diodes, mode of load, separation of losses and application rules.
Thyristor, static and dynamic characteristics, catalog parameters.
Special type power thyristors, thyristors GATT, GTO, their features and application.
Diac, triac, satic characteristics and application.
Bipolar power transistor, static characteristics at switch on and switch off state. Bipolar power transistor at switching mode, behavior of transistor at transitionally state by switch on and switch off, power losses.
Darlington´s connection, parallel-connected power transistor, example and application.
Unipolar power transistor, static characteristics at switch on and switch off state.
Unipolar power transistor at switching mode, operational area, power losses.
Catalog parameters and separation of IGBT´s, characteristics and behaviour of IGBT at switch on and switch off state.
IGBT at switching mode, curves switch on and switch off, power losses determination, permissible operational area.
MCT, static and dynamic characteristics, power losses and permissible operational area.
IGCT, static and dynamic characteristics, power losses and permissible operational area.
Style and casing of power semiconductor devices, available power range and electro-temperature parameters.
Laboratories:
Calculations of diode losses from catalog information, relation to prerequisite refrigeration.
Control test TEST 1 - Basic characteristics and parameters of diodes and thyristors.
Laboratory exercises Nr.1 - Diode and thyristor power losses.
Laboratory exercises Nr.2 - Static characteristics of power bipolar transistor.
Laboratory exercises Nr.3 - Static characteristics of power unipolar transistor.
Laboratory exercises Nr.4 - IGBT characteristics, measurement.
Laboratory exercises Nr.5 - MCT characteristics, measurement.
Control test TEST 2 - Basic characteristics and parameters of unipolar transistors and IGBT´s.
Conditions for subject completion
Occurrence in study plans
Occurrence in special blocks
Assessment of instruction