448-0304/01 – Power Semiconductor Devices (VSPM)
Gurantor department | Department of Electronics | Credits | 4 |
Subject guarantor | prof. Ing. Pavel Brandštetter, CSc. | Subject version guarantor | prof. Ing. Pavel Brandštetter, CSc. |
Study level | undergraduate or graduate | Requirement | Choice-compulsory |
Year | 2 | Semester | winter |
| | Study language | Czech |
Year of introduction | 2003/2004 | Year of cancellation | 2009/2010 |
Intended for the faculties | FEI | Intended for study types | Master |
Subject aims expressed by acquired skills and competences
Obtaining of theoretical knowledges from power semiconductor devices areas and practical experiences with dimensioning and applications. Knowledges amount to practical use for designed various electronics devices, as switching source, various type regulator and power semiconductor converters. Learned information extends the knowledge base of electrical engineer, especially if his topic is aimed in area of application power electronics systems.
Teaching methods
Summary
Subject deals with characteristics components that are used at power semiconductor converters, not only at dissimilarity from typical low power components but so application of modern power switch off components that are bipolar and unipolar transistor, IGBT and thyristor GTO, MCT and IGCT.
Compulsory literature:
Recommended literature:
Technical texts at http://fei.vsb.cz/kat448/kat_448.htm
Way of continuous check of knowledge in the course of semester
Verification of study:
Control tests T1, T2.
Conditions for credit:
Attendance on laboratory education (100%).
Report submission from laboratory exercises.
Attendance on control tests.
Acquisition of 25 points (minimum).
Point rating of exercises:
maximum 40 points, test T1 - max. 10 points,test T2 - max. 10 points, laboratory reports = max. 20 points.
E-learning
Other requirements
Prerequisities
Subject has no prerequisities.
Co-requisities
Subject has no co-requisities.
Subject syllabus:
Lectures:
Power semiconductor diode, static and dynamic characterization, catalog parameters.
Special type of power diodes, mode of load, separation of losses and application rules.
Thyristor, static and dynamic characterization, catalog parameters.
Special type power thyristors, thyristors GATT, GTO, their characterization and application.
Diac, triac, characterization and style application.
Bipolar power transistor, static characterization at switch on and switch off state.
Bipolar power transistor at switching mode, behavior of transistor at transitionally state by switch on and switch off, power losses.
Darlington connect, parallel-connected power transistor, example and application.
Unipolar power transistor, static characterization at switch on and switch off state.
Unipolar power transistor at switching mode, permissible operational area, power losses.
Catalog parameters and separation of IGBT, characterization and behavior of IGBT at switch on and switch off state.
IGBT at switching mode, curves switch on and switch off, assessment losses, permissible operational area.
MCT - static and dynamic characteristic, losses and permissible operational area.
Style and casing power semiconductor components, available power range and electro temperature parameter.
Exercises:
Revision basic knowledge of electro technical.
Calculations of simple power circuit with diode.
Calculations of diode losses from catalog information, relation to prerequisite refrigeration
Calculations of basic power circuit with thyristor.
Calculations of switching circuit with bipolar transistor.
Calculations of switching circuit with unipolar transistor.
Calculations of switching circuit with transistors IGBT.
Laboratories:
Laboratory exercises Nr.1 - Diode and thyristor losses.
Laboratory exercises Nr.2 - Static characterization of power bipolar transistor.
Laboratory exercises Nr.3 - Static characterization of power unipolar transistor.
Laboratory exercises Nr.4 - IGBT characteristics, measurement.
Laboratory exercises Nr.5 - MCT characteristics, measurement.
Computer labs:
Simulation of circuit with power semiconductor components at program PSspice.
Conditions for subject completion
Occurrence in study plans
Occurrence in special blocks
Assessment of instruction
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