448-0304/01 – Power Semiconductor Devices (VSPM)

Gurantor departmentDepartment of ElectronicsCredits4
Subject guarantorprof. Ing. Pavel Brandštetter, CSc.Subject version guarantorprof. Ing. Pavel Brandštetter, CSc.
Study levelundergraduate or graduateRequirementChoice-compulsory
Year2Semesterwinter
Study languageCzech
Year of introduction2003/2004Year of cancellation2009/2010
Intended for the facultiesFEIIntended for study typesMaster
Instruction secured by
LoginNameTuitorTeacher giving lectures
BRA30 prof. Ing. Pavel Brandštetter, CSc.
PAV15 Ing. Tomáš Pavelek, Ph.D.
Extent of instruction for forms of study
Form of studyWay of compl.Extent
Full-time Credit and Examination 2+2
Combined Credit and Examination 2+2

Subject aims expressed by acquired skills and competences

Obtaining of theoretical knowledges from power semiconductor devices areas and practical experiences with dimensioning and applications. Knowledges amount to practical use for designed various electronics devices, as switching source, various type regulator and power semiconductor converters. Learned information extends the knowledge base of electrical engineer, especially if his topic is aimed in area of application power electronics systems.

Teaching methods

Summary

Subject deals with characteristics components that are used at power semiconductor converters, not only at dissimilarity from typical low power components but so application of modern power switch off components that are bipolar and unipolar transistor, IGBT and thyristor GTO, MCT and IGCT.

Compulsory literature:

Heumann, K.: Basic Principles of Power Electronics. Springer-Verlag Berlin Heidelberg New York, ISBN 3-540-16138-4, 1986. Rashid, M. H.: Power Electronics. Prentice-Hall International, Inc. ISBN 0-13-334483-5, 1993.

Recommended literature:

Technical texts at http://fei.vsb.cz/kat448/kat_448.htm

Way of continuous check of knowledge in the course of semester

Verification of study: Control tests T1, T2. Conditions for credit: Attendance on laboratory education (100%). Report submission from laboratory exercises. Attendance on control tests. Acquisition of 25 points (minimum). Point rating of exercises: maximum 40 points, test T1 - max. 10 points,test T2 - max. 10 points, laboratory reports = max. 20 points.

E-learning

Další požadavky na studenta

Prerequisities

Subject has no prerequisities.

Co-requisities

Subject has no co-requisities.

Subject syllabus:

Lectures: Power semiconductor diode, static and dynamic characterization, catalog parameters. Special type of power diodes, mode of load, separation of losses and application rules. Thyristor, static and dynamic characterization, catalog parameters. Special type power thyristors, thyristors GATT, GTO, their characterization and application. Diac, triac, characterization and style application. Bipolar power transistor, static characterization at switch on and switch off state. Bipolar power transistor at switching mode, behavior of transistor at transitionally state by switch on and switch off, power losses. Darlington connect, parallel-connected power transistor, example and application. Unipolar power transistor, static characterization at switch on and switch off state. Unipolar power transistor at switching mode, permissible operational area, power losses. Catalog parameters and separation of IGBT, characterization and behavior of IGBT at switch on and switch off state. IGBT at switching mode, curves switch on and switch off, assessment losses, permissible operational area. MCT - static and dynamic characteristic, losses and permissible operational area. Style and casing power semiconductor components, available power range and electro temperature parameter. Exercises: Revision basic knowledge of electro technical. Calculations of simple power circuit with diode. Calculations of diode losses from catalog information, relation to prerequisite refrigeration Calculations of basic power circuit with thyristor. Calculations of switching circuit with bipolar transistor. Calculations of switching circuit with unipolar transistor. Calculations of switching circuit with transistors IGBT. Laboratories: Laboratory exercises Nr.1 - Diode and thyristor losses. Laboratory exercises Nr.2 - Static characterization of power bipolar transistor. Laboratory exercises Nr.3 - Static characterization of power unipolar transistor. Laboratory exercises Nr.4 - IGBT characteristics, measurement. Laboratory exercises Nr.5 - MCT characteristics, measurement. Computer labs: Simulation of circuit with power semiconductor components at program PSspice.

Conditions for subject completion

Combined form (validity from: 1960/1961 Summer semester)
Task nameType of taskMax. number of points
(act. for subtasks)
Min. number of points
Exercises evaluation and Examination Credit and Examination 100 (100) 51
        Exercises evaluation Credit 40 (40) 0
                Laboratory work Laboratory work 20  0
                Written exam Written test 20  0
        Examination Examination 60 (60) 0
                Written examination Written examination 40  0
                Oral Oral examination 20  0
Mandatory attendence parzicipation:

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Occurrence in study plans

Academic yearProgrammeField of studySpec.FormStudy language Tut. centreYearWSType of duty
2008/2009 (N2645) Electrical Engineerong, Communication and Computer Systems (2642T004) Electrical Machines Apparatus and Drives P Czech Ostrava 2 Choice-compulsory study plan
2008/2009 (N2645) Electrical Engineerong, Communication and Computer Systems (2642T004) Electrical Machines Apparatus and Drives K Czech Ostrava 2 Choice-compulsory study plan
2007/2008 (N2645) Electrical Engineerong, Communication and Computer Systems (2642T004) Electrical Machines Apparatus and Drives P Czech Ostrava 2 Choice-compulsory study plan
2007/2008 (N2645) Electrical Engineerong, Communication and Computer Systems (2642T004) Electrical Machines Apparatus and Drives K Czech Ostrava 2 Choice-compulsory study plan
2006/2007 (N2645) Electrical Engineerong, Communication and Computer Systems (2642T004) Electrical Machines Apparatus and Drives P Czech Ostrava 2 Choice-compulsory study plan
2006/2007 (N2645) Electrical Engineerong, Communication and Computer Systems (2642T004) Electrical Machines Apparatus and Drives K Czech Ostrava 2 Choice-compulsory study plan
2005/2006 (N2645) Electrical Engineerong, Communication and Computer Systems (2642T004) Electrical Machines Apparatus and Drives P Czech Ostrava 2 Choice-compulsory study plan
2005/2006 (N2645) Electrical Engineerong, Communication and Computer Systems (2642T004) Electrical Machines Apparatus and Drives K Czech Ostrava 2 Choice-compulsory study plan
2004/2005 (N2645) Electrical Engineerong, Communication and Computer Systems (2642T004) Electrical Machines Apparatus and Drives P Czech Ostrava 2 Choice-compulsory study plan
2004/2005 (N2645) Electrical Engineerong, Communication and Computer Systems (2642T004) Electrical Machines Apparatus and Drives K Czech Ostrava 2 Choice-compulsory study plan
2003/2004 (N2645) Electrical Engineerong, Communication and Computer Systems (2642T004) Electrical Machines Apparatus and Drives P Czech Ostrava 2 Choice-compulsory study plan
2003/2004 (N2645) Electrical Engineerong, Communication and Computer Systems (2642T004) Electrical Machines Apparatus and Drives K Czech Ostrava 2 Choice-compulsory study plan

Occurrence in special blocks

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