448-0514/01 – Power Switching Devices (VSPB)

Gurantor departmentDepartment of ElectronicsCredits4
Subject guarantorprof. Ing. Pavel Brandštetter, CSc.Subject version guarantorprof. Ing. Pavel Brandštetter, CSc.
Study levelundergraduate or graduateRequirementOptional
Year2Semesterwinter
Study languageCzech
Year of introduction2006/2007Year of cancellation2009/2010
Intended for the facultiesFEIIntended for study typesBachelor
Instruction secured by
LoginNameTuitorTeacher giving lectures
BRA30 prof. Ing. Pavel Brandštetter, CSc.
HUD067 Ing. Petr Hudeček
PAV15 Ing. Tomáš Pavelek, Ph.D.
SOB060 Ing. Martin Sobek, Ph.D.
SZO040 Ing. Josef Szotkowski
Extent of instruction for forms of study
Form of studyWay of compl.Extent
Full-time Credit and Examination 2+2
Combined Credit and Examination 2+15

Subject aims expressed by acquired skills and competences

The main goal of the subject is to obtain theoretical knowledge from power semiconductor devices areas and practical experiences with dimensioning and applications. Obtained knowledge employ to practical use for the design of various electronics equipments, as switching sources, various type regulators and power semiconductor converters. Learned information creates the knowledge base of bachelor, especially if his topic is aimed in area of power electronics systems application .

Teaching methods

Summary

Subject deals with characteristics components that are used at power semiconductor converters, not only at dissimilarity from typical low power components but so application of modern power switch off components that are bipolar and unipolar transistor, IGBT and thyristor GTO, MCT and IGCT.

Compulsory literature:

Heumann, K.: Basic Principles of Power Electronics. Springer-Verlag Berlin Heidelberg New York, 1986, ISBN 3-540-16138-4. Rashid, M. H.: Power Electronics. Prentice-Hall International, Inc. 1993, ISBN 0-13-334483-5.

Recommended literature:

Vondrášek,F.: Výkonová elektronika I, skriptum ZČU Plzeň, 1994. Benda,V.: Silnoproudá zařízení polovodičová, skriptum ČVUT Praha, 1987. Heumann, K.: Basic Principles of Power Electronics. Springer-Verlag Berlin Heidelberg New York, 1986, ISBN 3-540-16138-4. Rashid, M. H.: Power Electronics. Prentice-Hall International, Inc. 1993, ISBN 0-13-334483-5.

Way of continuous check of knowledge in the course of semester

Verification of study: Control tests T1, T2. Conditions for credit: Attendance on laboratory education (100%). Report submission from laboratory exercises. Attendance on control tests. Acquisition of 25 points (minimum). Point rating of exercises: maximum 40 points, test T1 - max. 10 points,test T2 - max. 10 points, laboratory reports = max. 20 points.

E-learning

Další požadavky na studenta

Prerequisities

Subject has no prerequisities.

Co-requisities

Subject has no co-requisities.

Subject syllabus:

Lectures: Power semiconductor diode, static and dynamic characteristics, catalog parameters. Special type of power diodes, mode of load, separation of losses and application rules. Thyristor, static and dynamic characteristics, catalog parameters. Special type power thyristors, thyristors GATT, GTO, their features and application. Diac, triac, satic characteristics and application. Bipolar power transistor, static characteristics at switch on and switch off state. Bipolar power transistor at switching mode, behavior of transistor at transitionally state by switch on and switch off, power losses. Darlington´s connection, parallel-connected power transistor, example and application. Unipolar power transistor, static characteristics at switch on and switch off state. Unipolar power transistor at switching mode, operational area, power losses. Catalog parameters and separation of IGBT´s, characteristics and behaviour of IGBT at switch on and switch off state. IGBT at switching mode, curves switch on and switch off, power losses determination, permissible operational area. MCT, static and dynamic characteristics, power losses and permissible operational area. IGCT, static and dynamic characteristics, power losses and permissible operational area. Style and casing of power semiconductor devices, available power range and electro-temperature parameters. Exercises: Repetition of basic knowledge from electronics. Calculations of simple power circuits with diodes. Calculations of diode losses from catalog information, relation to prerequisite refrigeration. Calculations of basic power circuit with thyristors. Control test TEST 1 - Basic characteristics and parameters of diodes and thyristors. Calculations of switching circuits with bipolar transistors. Calculations of switching circuits with unipolar transistors. Calculations of switching circuits with IGBT´s. Control test TEST 2 - Basic characteristics and parameters of unipolar transistors and IGBT´s. Laboratories: Laboratory exercises Nr.1 - Diode and thyristor power losses. Laboratory exercises Nr.2 - Static characteristics of power bipolar transistor. Laboratory exercises Nr.3 - Static characteristics of power unipolar transistor. Laboratory exercises Nr.4 - IGBT characteristics, measurement. Laboratory exercises Nr.5 - MCT characteristics, measurement. Computer labs: Simulation of circuits with power semiconductor components at program PSpice.

Conditions for subject completion

Full-time form (validity from: 1960/1961 Summer semester)
Task nameType of taskMax. number of points
(act. for subtasks)
Min. number of points
Exercises evaluation and Examination Credit and Examination 100 (100) 51
        Exercises evaluation Credit 40 (40) 0
                Test No.1 Written test 10  5
                Test No.2 Written test 10  5
                Laboratory reports Laboratory work 20  10
        Examination Examination 60 (60) 0
                Written exam Written examination 20  10
                Oral exam Oral examination 40  10
Mandatory attendence parzicipation:

Show history

Occurrence in study plans

Academic yearProgrammeField of studySpec.FormStudy language Tut. centreYearWSType of duty
2009/2010 (B2649) Electrical Engineering (2602R014) Applied and Commercial Electronics P Czech Ostrava 2 Optional study plan
2009/2010 (B2649) Electrical Engineering (2602R014) Applied and Commercial Electronics K Czech Ostrava 2 Optional study plan
2008/2009 (B2649) Electrical Engineering (2602R014) Applied and Commercial Electronics P Czech Ostrava 2 Optional study plan
2008/2009 (B2649) Electrical Engineering (2602R014) Applied and Commercial Electronics P Czech Rožnov pod Radhoštěm 2 Optional study plan
2008/2009 (B2649) Electrical Engineering K Czech Šumperk 2 Optional study plan
2008/2009 (B2649) Electrical Engineering (2602R014) Applied and Commercial Electronics K Czech Ostrava 2 Optional study plan
2007/2008 (B2649) Electrical Engineering (2602R014) Applied and Commercial Electronics P Czech Ostrava 2 Optional study plan
2007/2008 (B2649) Electrical Engineering (2602R014) Applied and Commercial Electronics K Czech Ostrava 2 Optional study plan

Occurrence in special blocks

Block nameAcademic yearForm of studyStudy language YearWSType of blockBlock owner