454-0315/01 – Micro-electronic Circuit Technology (TMO)

Gurantor departmentDepartment of TelecommunicationsCredits8
Subject guarantorIng. Radek Novák, Ph.D.Subject version guarantorIng. Radek Novák, Ph.D.
Study levelundergraduate or graduateRequirementChoice-compulsory
Year3Semestersummer
Study languageCzech
Year of introduction2003/2004Year of cancellation2009/2010
Intended for the facultiesFEIIntended for study typesFollow-up Master
Instruction secured by
LoginNameTuitorTeacher giving lectures
NOV24 Ing. Radek Novák, Ph.D.
Extent of instruction for forms of study
Form of studyWay of compl.Extent
Full-time Credit and Examination 4+2
Combined Credit and Examination 2+8

Subject aims expressed by acquired skills and competences

Understand the technology of production of electronic modules applied for the various units. Learning outcomes are set so that the students are able to identify and apply technology tasks in the field of microelectronic circuits.

Teaching methods

Summary

Subject is concern in initial materials and integrated structure manufacturing technology production and Integrated circuits, principle for three-dimensional bipolar and unipolar structure ordering, also considering resulting peripheral characteristics, automated design resources and its verification.

Compulsory literature:

Texas Engineering Extension Service,Texas University Systém, College Station, Texas 1997,Silicon Materials Fabrication-Introduction and Review of Fundamental Concepts, Crystal Growth, Wafer Preparation, Epitaxial Deposition, Chemical Vapor Deposition, Oxidation/Diffusion, Wet Processes, WetDry Etch, CMP-Chemical Mechanical Polishing Colclaser, R.A.: Micro-Electronics Processing and Device Design, The University of New Mexico, JW and S.,N.Y.,1997 Botkar, K.R.: Integrated Circuits, Indian Institute of Science, Bangalore 1997 Einspruch, N.G.; Larrabee,G.B.: VLSI Electronics Microstructure Science, TI Dallas, Texas,Academic Press,1983 Wolf, S.; Tauber,R.N.: Silicon Processing for the VLSI ERA-Process Technology, Lattice Press,Sunset Beach, 1990 Gray, P.R.; Meyer,R.G.: Analysis and Design of Analog Integrated Circuits,University of California, Berkeley, JW and S.,N.Y.,1997 Dekker, M.: Handbook of Semiconductor Manufacturing Technology, ISBN: 0-8247-8783-8, Inc.,2000. Dekker, M.: Microlithography Fundamentals in Semiconductor Devices and Fabrication Technology, ISBN: 0-8247-9951-8, Inc.,2000. Fy.Literature: Wacker Siltronic-Wafers for the World of Microchips, 2000. Schroder, D.K.: Semiconductor Material and Device Characterization, Arizona State University, Tempe, Arizona, JW and S.,N.Y.,1999

Recommended literature:

Way of continuous check of knowledge in the course of semester

Conditions for credit: Fullfilling of Project 1 and Project 2.

E-learning

Další požadavky na studenta

Prerequisities

Subject has no prerequisities.

Co-requisities

Subject has no co-requisities.

Subject syllabus:

Lectures: Materials for ICs. Crystal growth. Zonal rafination. Epitax growth. Oxidation, difussion. Iont implantation. Photolitography. Plasma etching. Phyzical deposition of metalic lays. Lays etching. Contamination of boards, cleaning. Monolithic rezistors, capacitors. Technology COSMOS. Rule for design in bipolar struktures. Example of tranzistoru NPN design. Test struktures. Realization of tranzistor N MOS. Metodology of design ICs, CAD devices (Cadence, Spice, Verilog). Modeling. Exercises: Difusion - matematical model, pressure and temperature dependence, calculation of depth of lay. Laboratories: Organization of laboratory exercises at firm ON-Semiconductor, Rožnov pod Radhoštěm. Properties of lays oxid and nitrid Silicium, created by LPCVD and PECVD technology . Charakterization Si epitax lay with using CV plotter with probe SSM 495. Analyzis of rest atmosfera in sputtering agregat LLS801. Measuring parameters AL alloys on test Si boards. Microhardness measuring of sputtered lay. Measuring of etch speed PECVD nitrid-rezist on test Si boards. Measuring of reproducebility etch speed in agregat TEGAL901e. Comparisn strip speeds of rezist on barelovém a singledesk agregat. Modeling of concentration profil and lay-rezistance of lays created by difusion and iont implantation. Measuring of specific parameters - test structures on Si board. Modeling of function bipolar tranzistor using simulator. Method CV(Standard Capacitance-Voltage). Influence of expozition and thick of lay. Projects: Project No.1 Complete description of bipolar technology. Project No.2 Complete description of unipolar technology.

Conditions for subject completion

Full-time form (validity from: 1960/1961 Summer semester)
Task nameType of taskMax. number of points
(act. for subtasks)
Min. number of points
Exercises evaluation and Examination Credit and Examination 100 (100) 51
        Exercises evaluation Credit 45 (45) 0
                Written exam Written test 45  0
        Examination Examination 55 (55) 0
                Written examination Written examination 55  0
Mandatory attendence parzicipation:

Show history

Occurrence in study plans

Academic yearProgrammeField of studySpec.FormStudy language Tut. centreYearWSType of duty
2009/2010 (N2647) Information and Communication Technology (2612T059) Mobile Technology P Czech Ostrava 1 Optional study plan
2009/2010 (N2647) Information and Communication Technology (2612T059) Mobile Technology K Czech Ostrava 1 Optional study plan
2008/2009 (N2645) Electrical Engineerong, Communication and Computer Systems (2612T018) Electronics and Communication Technology P Czech Ostrava 3 Choice-compulsory study plan
2008/2009 (N2645) Electrical Engineerong, Communication and Computer Systems (2612T018) Electronics and Communication Technology K Czech Ostrava 3 Choice-compulsory study plan
2008/2009 (N2647) Information and Communication Technology (2601T013) Telecommunication Technology P Czech Ostrava 1 Optional study plan
2008/2009 (N2647) Information and Communication Technology (2601T013) Telecommunication Technology K Czech Ostrava 1 Optional study plan
2008/2009 (N2647) Information and Communication Technology (2612T059) Mobile Technology P Czech Ostrava 1 Optional study plan
2008/2009 (N2647) Information and Communication Technology (2612T059) Mobile Technology K Czech Ostrava 1 Optional study plan
2007/2008 (N2645) Electrical Engineerong, Communication and Computer Systems (2612T018) Electronics and Communication Technology P Czech Ostrava 3 Choice-compulsory study plan
2007/2008 (N2645) Electrical Engineerong, Communication and Computer Systems (2612T018) Electronics and Communication Technology K Czech Ostrava 3 Choice-compulsory study plan
2007/2008 (N2647) Information and Communication Technology (2601T013) Telecommunication Technology P Czech Ostrava 1 Optional study plan
2007/2008 (N2647) Information and Communication Technology (2601T013) Telecommunication Technology K Czech Ostrava 1 Optional study plan
2007/2008 (N2647) Information and Communication Technology (2612T059) Mobile Technology P Czech Ostrava 1 Optional study plan
2007/2008 (N2647) Information and Communication Technology (2612T059) Mobile Technology K Czech Ostrava 1 Optional study plan
2006/2007 (N2645) Electrical Engineerong, Communication and Computer Systems (2612T018) Electronics and Communication Technology P Czech Ostrava 3 Choice-compulsory study plan
2006/2007 (N2645) Electrical Engineerong, Communication and Computer Systems (2612T018) Electronics and Communication Technology K Czech Ostrava 3 Choice-compulsory study plan
2006/2007 (N2647) Information and Communication Technology (2601T013) Telecommunication Technology P Czech Ostrava 1 Optional study plan
2006/2007 (N2647) Information and Communication Technology (2601T013) Telecommunication Technology K Czech Ostrava 1 Optional study plan
2006/2007 (N2647) Information and Communication Technology (2612T059) Mobile Technology P Czech Ostrava 1 Optional study plan
2006/2007 (N2647) Information and Communication Technology (2612T059) Mobile Technology K Czech Ostrava 1 Optional study plan
2005/2006 (N2645) Electrical Engineerong, Communication and Computer Systems (2612T018) Electronics and Communication Technology P Czech Ostrava 3 Choice-compulsory study plan
2005/2006 (N2645) Electrical Engineerong, Communication and Computer Systems (2612T018) Electronics and Communication Technology K Czech Ostrava 3 Choice-compulsory study plan
2004/2005 (N2645) Electrical Engineerong, Communication and Computer Systems (2612T018) Electronics and Communication Technology P Czech Ostrava 3 Choice-compulsory study plan
2004/2005 (N2645) Electrical Engineerong, Communication and Computer Systems (2612T018) Electronics and Communication Technology K Czech Ostrava 3 Choice-compulsory study plan
2003/2004 (N2645) Electrical Engineerong, Communication and Computer Systems (2612T018) Electronics and Communication Technology P Czech Ostrava 3 Choice-compulsory study plan
2003/2004 (N2645) Electrical Engineerong, Communication and Computer Systems (2612T018) Electronics and Communication Technology K Czech Ostrava 3 Choice-compulsory study plan

Occurrence in special blocks

Block nameAcademic yearForm of studyStudy language YearWSType of blockBlock owner